pb free plating product F30U60DN pb 30amperes,600volts heatsink common cathode ultra fast recovery rectifiers mbrf20100ct thru mbrf20200ct F30U60DN ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 1/2 rev.08t ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature F30U60DN using the lastest fred fab process(planar passivation chip) with ultrafast and soft recovery characteristic. to-3pb(to-3pn) internal configuration cathode(bottom side metal heatsink) cathode anode base backside ? ? ? ? ? ? ? ? ? ? anode a b s o l u t e m a x i m u m r a t i n g s p a r a m e t e r s y m b o l t e s t c o n d i t i o n s v a l u e s u n i t s r e p e t i t i v e p e a k r e v e r s e v o l t a g e v r r m 6 0 0 v c o n t i n u o u s f o r w a r d c u r r e n t i f ( a v ) t c = 1 1 0 c 3 0 a s i n g l e p u l s e f o r w a r d c u r r e n t i f s m t c = 2 5 c 24 0 m a x i m u m r e p e t i t i v e f o r w a r d c u r r e n t i f r m s q u a r e w a v e , 2 0 k h z 6 0 o p e r a t i n g j u n c t i o n t j 1 7 5 c s t o r a g e t e m p e r a t u r e s t s t g - 5 5 t o + 1 7 5 c e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p . m a x . u n i t s b r e a k d o w n v o l t a g e b l o c k i n g v o l t a g e v b r , v r i r = 1 0 0 a 6 0 0 v f o r w a r d v o l t a g e ( p e r d i o d e ) v f i f = 15 a 1 . 3 5 1 . 6 0 i f = 15 a , t j = 1 2 5 c 1 . 20 1 . 4 0 r e v e r s e l e a k a g e c u r r e n t ( p e r d i o d e ) i r v r = v r r m 2 0 a t j = 1 5 0 c , v r = 6 0 0 v 2 0 0 r e v e r s e r e c o v e r y t i m e ( p e r d i o d e ) t r r i f = 0 . 5 a , i r = 1 a , i r r = 0 . 2 5 a 3 5 4 5 n s i f = 1 a , v r = 3 0 v , d i / d t = 2 0 0 a / u s 2 7 3 5 t h e r m a l c h a r a c t e r i s t i c s p a r a m t e r s y m b o l t y p u n i t s j u n c t i o n - t o - c a s e r j c 0 . 8 / w
electrical performance (typical) 0 . 1 1 . 0 1 0 . 0 1 0 0 . 0 0 0 . 2 0 . 4 0 . 6 0 . 8 1 1 . 2 1 . 4 f o r w a r d c u r r e n t i f ( a ) f o r w a r d v o l t a g e v f ( v ) f o r w a r d c h a r a c t e r i s t i c ( t y p . ) t a = 2 5 t a = 1 2 5 0 . 0 0 . 0 0 . 1 1 . 0 1 0 . 0 1 1 0 0 r e v e r s e c u r r e n t i r ( u a ) r e v e r s e v o l t a g e v r ( v ) r e v e r s e c h a r a c t e r i s t i c ( t y p . ) t a = 2 5 t a = 1 2 5 p a c k a g e i n f o r m a t i o n t o - 3 p b p a c k a g e s y m b o l d i m e n s i o n s ( m i l l i m e t e r s ) m i n . m a x . a 4 . 6 0 5 . 0 0 a 1 1 . 3 0 1 . 7 0 a 2 2 . 2 0 2 . 6 0 b 0 . 8 0 1 . 2 0 b 1 2 . 9 0 3 . 3 0 b 2 1 . 9 0 2 . 3 0 c 0 . 4 0 0 . 8 0 e 5 . 2 5 5 . 6 5 e 1 5 . 3 1 5 . 7 e 1 1 3 . 2 1 3 . 6 e 2 1 3 . 1 1 3 . 5 e 3 9 . 1 0 9 . 5 0 h 1 9 . 7 2 0 . 1 h 1 1 9 . 1 2 0 . 1 h 2 1 8 . 3 1 8 . 7 h 3 2 . 8 0 3 . 2 0 g 4 . 8 0 5 . 2 0 p 3 . 0 0 3 . 4 0 ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 2/2 rev.08t F30U60DN
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